'/tiiy .m.i-(-onaiicto'i lj 10 ducts., line. tx u 20 stern ave. springfield, new jersey 07081 u.s.a. mtp4n08, MTP5N05 mtp4n10, mtp5n06 i)t'sii;ih'i-'> data sheet n-channel enhancement mode silicon gate tmos power field effect transistor these tmos power rets are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching .speeds ? switching times specified at 100c ? designer's data ? iqss. vos(on). vqs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-orain dioda characterized for use with inductive loads tmos o s 4.0 and 5.0 ampere n-channel tmos power fet ros(on) 3 0-? ohm 80 and 100 volts so ind 60 volts maximum ratings 1 rating . drain-source voltage drain-gate voltage |hgs - 1.0 mo) gate-soure* vohage drain currant continuous pulsed gale current ? pulsed total power dissipation @ t(; = 2sc derate above 25c operating and storage temparaturn rango symbol voss vogh vgs id 'dm 'cm po tj.tstg mtp 5n05 50 so snob 60 60 4n08 80 80 4n10 100 100 20 50 10 40 90 15 50 04 -65 to 1 50 unit vdc vdc v* adc adc warn w/c c thermal characteristics thermal resistance junction to case maximum lead tamp, for soldering purposes. 1/8* from case for 5 seconds ?9jc tl 2.5 275 c/w c "wont cuv" condition* the designer's data sheet permits the design of most circuits entirely from the i nformation presented. limit data ? representing device characteristics boundaries?are given to facilitate "worst casa" design. mtp4no* mtmn10 m1f5nos mip5n06 ?uuifnn 1m m a la to-220a8 quality semi-conductors
electrical characteristics (tc = ;5"c unless otherwise noted) | symbol chametaristie min mix unit off characteristics drain-source breakdown voltage (vqs = 0. in = 5.0 maj MTP5N05 mtp5n06 mtp4nob mtp4n10 zero gate voltage drain currant (vds = 0.85 rated vfjss- vgs = ) (tj=100c) gate-body leakage current (vgs = 20 vde, vds a 0) v(br)dss 'dss MTP5N05. mtp5n06 (vgs = 10 vdc. id " 2.0 adc) mtp4n08/mtp4n10 dram-source on-voltage (vgg = 10 v) (ld = 5.0adc) MTP5N05/mtp5n06 MTP5N05/mtp5n06 (vds = 15 v. i0 =2.0 a) mtp4n08/mtp4n10 vgs(th) rds(on) vds(on) 91s 2.0 1.5 - - 075 075 4.5 4.0 0.6 08 375 3.0 4.8 3.2 ? vdc ohms i i vdc mhos ; dynamic characteristics input capacitance (v0s * 25 v. vqs ? o. f ? i .0 mh*> output capacitance (vds = 25 v, vgs = o, f = i .0 mhi) reverse transfer capacitance (vds = 25 v. vgs = 0. ? = 1 .0 mh*) ciss cdss crss ? ? ? 300 250 r eo pf pf pf switching characteristics* (tj= 100'c) j turn-on delay time | rise time | turn -off delay tim* ! fall time (vds " 25 v. id - 0.5 rated id. ngen = 50 ohms. see figures 1 and 2) ?d(on) ?r 'dloffl tf - ? - - 20 80 30 30 ns source drain diode characteristics' characteristic forward on-voltage forward turn-on time reverse recovery time (15= rated id- vgs = 0. symbol vsd 'on 'rr typ 2.5 150 250 unit vdc ns ns ?pulse r?it pulh width -s3oo ?i. duty cyckl <2%. figure 1 - switching test circuit vdd figure 2 - switching waveforms out output. vou, inverted input. vm
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